<p>Provided is an epitaxial wafer manufacturing method by which surface defects on an epitaxial layer and generation of slip can be reduced. The epitaxial wafer manufacturing method is characterized in that the method includes a smoothing step of smoothing the wafer surface by controlling application of an etching solution onto the wafer surface in accordance with the surface shape of the silicon wafer, and an epitaxial layer forming step of forming an epitaxial layer composed of a silicon single crystal by epitaxial growing on the surface of the wafer.</p>
