POLARIZATION TRANSFER DEVICE AND ITS TRANSFER CONTROL METHOD

摘要

PROBLEM TO BE SOLVED: To solve the problem in a conventional ferroelectric memory that microfabrication and high integration are limited due to insufficient characteristics and reliability because ferroelectric thin films utilizing nonvolatility are isolated for each memory cell array and the ferroelectric thin film must be cut into small shape in improving the degree of integration as a nonvolatile memory.

SOLUTION: A memory cell group in a ferroelectric memory employs a polarization transfer device structure having a configuration in which the ferroelectric thin films are sandwiched by a plurality of electrodes and the ferroelectric thin films are continuously unified to transfer a polarization signal in the ferroelectric thin films. Thus, ferroelectric characteristics can be ensured and a ferroelectric memory suitable for microfabrication and high integration can be obtained.

COPYRIGHT: (C)2007,JPO&INPIT