| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which is provided with; a first mode in which bit-line pairs are precharged for each cycle in which access is made to a data register; and a second mode in which bit-line pairs are precharged when access is made to a specific memory cell of the data register. <P>SOLUTION: A precharge signal generation circuit 50 outputs precharge signals including pulses, in the first mode, for each cycle in which access is made to a data register 23; and generates precharge signals which mask signals including pulses, in the second mode, for each cycle in which access is made to the data register 23 in case that access is designated to a memory cell except a prescribed memory cell of the data register 23. First precharge circuits PR0-PR7 precharge bit-line pairs in response to the activation of precharge signals. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
