| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device having elements both in a silicide region and a nonsilicide region without increasing junction leak, even if a spacing is small between adjacent gate electrodes in a silicide forming region. SOLUTION: A method of manufacturing the semiconductor device comprises a diffusion layer forming step (a) of forming a plurality of gate electrodes 103 in the silicide region Rsili and non silicide region Rnon, and a plurality of diffusion layers 104 on a semiconductor substrate 101 which is exposed from the gate electrodes 103; a first dielectric forming step (b) of forming a first dielectric 107 on the semiconductor substrate 101; a second dielectric forming step (c) of adding an impurity to the first dielectric 107 in the silicide region to form a second dielectric 107b having a slower etching rate than the first dielectric 107; and a step of removing the first dielectric 107a remaining on the silicide region Rsili by wet etching after retreating step (d) of the first dielectric 107 by anisotropic etching. COPYRIGHT: (C)2007,JPO&INPIT
|
