| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate which can manufacture a semiconductor substrate so that its size (area) is small, and to provide a method of manufacturing a semiconductor device, and the semiconductor device. SOLUTION: In the method of manufacturing the semiconductor substrate 41, a first supporter hole 21 and a second supporter hole 22 are first formed on a boundary between a first element isolation layer 12 and an SOI element forming region 13. Then, a supporter forming layer 27 is formed so as to cover the insides of the supporter holes 21, 22 and the top of a silicon layer 16, and after that, a supporter 26 is formed. By forming the first and second supporter holes 21 and 22 on the boundary, the areas of the supporter holes 21, 22 in the SOI element forming region 13 can be reduced. COPYRIGHT: (C)2007,JPO&INPIT
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