CHARGED PARTICLE BEAM DEVICE, FOCUS ADJUSTING METHOD OF CHARGED PARTICLE BEAM, MEASURING METHOD OF FINE STRUCTURE, INSPECTION METHOD OF FINE STRUCTURE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To adjust a focus of charged particle beam with high accuracy while reducing damage onto a sample. SOLUTION: Focus adjusting areas P1 to Pn, including contour points of a pattern inside respectively, are arranged, and the focus adjusting areas P1 to Pn are successively scanned by an electron beam EB in correspondence with respective exciting conditions while changing the exciting conditions of an object lens 22 stepwise. An indicator expressing focusing state of the electron beam EB at respective exciting conditions is calculated on the basis of respective exciting conditions and detected signals related to respective focus adjusting areas obtained, and an optimum exciting condition for obtaining optimum focus position is calculated from the obtained indicator. COPYRIGHT: (C)2007,JPO&INPIT