发明名称 |
Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate |
摘要 |
In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
|
申请公布号 |
US2007181145(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20050587394 |
申请日期 |
2005.01.27 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ISHIZUKA SHUUICHI;SASAKI MASARU;TAKAHASHI TETSURO;MAEKAWA KOJI |
分类号 |
B08B6/00;B08B7/00;B08B9/00;C23F1/00;H01J37/32;H01L21/3065;H01L21/31 |
主分类号 |
B08B6/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|