发明名称 Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate
摘要 In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
申请公布号 US2007181145(A1) 申请公布日期 2007.08.09
申请号 US20050587394 申请日期 2005.01.27
申请人 TOKYO ELECTRON LIMITED 发明人 ISHIZUKA SHUUICHI;SASAKI MASARU;TAKAHASHI TETSURO;MAEKAWA KOJI
分类号 B08B6/00;B08B7/00;B08B9/00;C23F1/00;H01J37/32;H01L21/3065;H01L21/31 主分类号 B08B6/00
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