| 摘要 |
In order too control the non-uniformity of electron emission amount within the surface or between adjacent pixels which is a cause for formation non-uniformity when forming, using anodization, an electron acceleration layer for an MIM type diode element which is appropriate for a thin film electron source, there is provided an insulation layer 12 which forms a MIM type diode element as a non-crystalline oxidized film which is formed by anodization of the surface of a lower electrode 11 with the formation of the lower electrode 11 as laminated layers which have a single layer film of aluminum or aluminum alloy or an outer layer of any of these, with a non-phosphor as a single layer film of aluminum or aluminum alloy which is anodized.
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