发明名称 |
Method of planarizing a semiconductor device |
摘要 |
Example embodiments are directed to a method of planarizing a semiconductor device. A first CMP process may be performed on an insulating layer to remove a stepped structure of the insulating layer. A second CMP process may be performed to planarize the insulating layer with the stepped structure removed until a given pattern is exposed. A process temperature of the first CMP process may be higher than that of the second CMP process. Accordingly, an initial stepped structure may be more readily removed in a planarization process of a surface of the semiconductor device, which may reduce the CMP process time and may increase the degree of planarization.
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申请公布号 |
US2007184663(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20070702124 |
申请日期 |
2007.02.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUN-YONG;KIM HO-YOUNG;HONG CHANG-KI;YOON BO-UN;SHIN SUNG-HO |
分类号 |
H01L21/461;H01L21/302 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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