发明名称 Method of manufacturing a semiconductor device
摘要 A semiconductor device manufacturing method is disclosed wherein a semiconductor integrated circuit is formed in each of plural semiconductor chip regions of a semiconductor wafer which regions are to become semiconductor chips later and then the semiconductor wafer is cut along scribing regions each provided between adjacent semiconductor chip regions. The semiconductor chip regions are each in a rectangular shape having long sides and short sides. The scribing regions include a first scribing region in contact with the short sides and a second scribing region in contact with the long sides. The width of the second scribing region is smaller than the width of the first scribing region. In a photolithography process, first and second alignment patterns for making alignment in both X and Y directions are all formed in the first scribing region and not formed in the second scribing region. Both improvement of the alignment accuracy and reduction of the semiconductor device manufacturing cost can be attained.
申请公布号 US2007184634(A1) 申请公布日期 2007.08.09
申请号 US20070649297 申请日期 2007.01.04
申请人 RENESAS TECHNOLOGY CORP. 发明人 SUZUKI SHINYA;SAWADA TOSHIAKI;IWASAKI MASATOSHI
分类号 H01L21/00 主分类号 H01L21/00
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