| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having desired characteristics by varying the characteristics of individual semiconductor elements of the semiconductor device mounting a planar transistor, a fin transistor having channels formed in two side faces of the fin, and a tri-gate transistor having channels formed in a total of three sides, comprising two side faces and the upper surface of the fin on a substrate. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate, an element isolation layer formed in the semiconductor substrate, a planar transistor region, consisting of a planar transistor where a current flows in the direction substantially parallel with the surface of the semiconductor substrate, and a fin transistor region consisting of a fin transistor where a current flows in the direction substantially parallel with the surface of the semiconductor substrate on the side face of a fin, formed substantially perpendicular with respect to the surface of the semiconductor substrate. The height of the element isolation layer is larger in the planar transistor region than in the fin transistor region, and the fin transistor region has a plurality of heights of the element isolation layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
