| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique which increases a speed of write/read of an element and improves a fresh characteristic of the element by designing the semiconductor element so as to form a recess channel area and a fin type channel area on its lower portion, especially, utilizing an island type recess gate mask exposing a predetermined active area and an element separating structure adjacent to it, concerning a semiconductor element and its manufacturing method. <P>SOLUTION: The semiconductor element includes: an element separating structure 120 which forms an active area on a semiconductor substrate 110; a recess which is formed by etching the active area exposed with an island type recess gate mask and an element separating structure adjacent to it in a predetermined thickness; a fin-type channel area 155 which is formed on the semiconductor substrate of the lower portion of the recess; a gate insulating film 160 which is formed on the upper portion of the active area containing the fin-type channel area 155 and the recess; and a gate electrode 197 which buries the fin-type channel area and the recess, and is formed on the upper portion of gate insulating film of the gate area. <P>COPYRIGHT: (C)2007,JPO&INPIT |
