TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A transistor and its manufacturing method are provided to efficiently control space between a carbon nano tube and a conductor by controlling the width of a spacer. A first dielectric pattern is located on a first conductive structure(102). The first dielectric pattern defines a first hole(11). The first hole exposes the first conductive structure and has a first radius. A second conductive structure pattern(104a) is located on the first dielectric pattern and defines a second hole(12). The second hole is communicated with the first hole and has a second radius greater than the first radius. A second dielectric pattern(103a) is located on the first dielectric pattern and the second conductive structure pattern and communicated with the second hole to define a third hole(13) having the second radius. At least one carbon nano tube(108) is vertically grown from a part of the first conductive structure exposed by the first hole.