| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a fewer number of additional steps required for forming a capacitor. <P>SOLUTION: A recess for a first capacitor and a wiring groove are formed in an interlayer insulating film. A lower electrode is filled in the recess for a first capacitor. A first wiring is filled in the wiring groove. An etching stopper film and a via-layer insulating film are arranged on the interlayer insulating film. A first via hole penetrates through the via-layer insulating film and the etching stopper film, and reaches the upper face of the first wiring. A first plug is filled inside the first via hole. A recess for a second capacitor at least partially overlapped with the lower electrode in a plane view is formed in the via-layer insulating film. An upper electrode covers the bottom face and the side faces of the recess for a second capacitor. The upper electrode, etching stopper film, and lower electrode constitute the capacitor. A second wiring connected to the first plug is formed on the via-layer insulating film. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
