| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser which easily controls self excitation properties. SOLUTION: The nitride semiconductor laser comprises: an activity layer mainly containing In and Ga; a saturable absorption layer (S. A.) mainly containing In and Ga; and a heterointerface of a layer mainly containing Al and Ga and a layer mainly containing In and Ga or Ga, where a distance from the saturable absorption layer to the heterointerface is 15 nm or less. Carriers reach the heterointerface by a tunnel effect to perform recombination even in the heterointerface. COPYRIGHT: (C)2007,JPO&INPIT
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