发明名称 SILICON OXIDE FILM DOPED WITH RARE EARTH (RE) INCLUDING NANO CRYSTALLINITY SILICON DEPOSITED BY SPUTTERING FOR APPLICATION TO ELECTROLUMINESCENT ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an SRSO film doped with rare earth (RE) elements which uses nano crystallinity (nc) silicon particles. SOLUTION: There are provided a supply process 702 of Si which is a first target and is embedded with a first RE element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymiun (Pr), or terbium (Tr), a supply process 704 of Si which is a second target, a simultaneous sputtering process 708 for first and second targets, a formation process 710 of an Si oxide (SRSO) film which contains much Si for a substrate and is doped with first RE element, and an annealing process 712 of an SRSO film which is doped with first RE element. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007201451(A) 申请公布日期 2007.08.09
申请号 JP20060350640 申请日期 2006.12.26
申请人 SHARP CORP 发明人 GAO WEI;LI TINGKAI;BARROWCLIFF ROBERT A;YOSHI ONO;SHIEN TEN SUU
分类号 H01L21/316;C09K11/08;C09K11/59;C23C14/10;C23C14/34;C23C14/58;H05B33/10;H05B33/14 主分类号 H01L21/316
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