| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, forming a control gate electrode without a problem such as causing a positional deviation at the time of forming a control gate electrode and further preventing a leakage from occurring between the control gate electrode and a floating gate electrode. SOLUTION: There are provided: a semiconductor film; a first gate insulating film on the semiconductor film; a floating gate electrode on the first gate insulating film; a second gate insulating film covering the floating gate electrode; and a control gate electrode on the second gate insulating film; wherein the control gate electrode is formed so as to cover the floating gate electrode via the second gate insulating film, a side wall is formed in the control gate electrode, and the side wall is formed in a level difference part of the control gate electrode generated by the floating gate electrode. COPYRIGHT: (C)2007,JPO&INPIT
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