| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device with high output for reducing an operating voltage. SOLUTION: This semiconductor laser device is provided with a first conductive buffer layer 11, a first conductive clad layer 12, an active layer 13, and a second conductive clad layer 14 formed on a first conductive semiconductor substrate 10. The band gap of the first conductive buffer layer 11 is set so as to be larger than the band gap of the semiconductor substrate 10, and smaller than the band gap of the first conductive clad layer 12. The impurity density of the first conductive buffer layer 11 is set so as to be larger than the impurity density of the first conductive clad layer 12. COPYRIGHT: (C)2007,JPO&INPIT
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