| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III-V(N) compound semiconductor multilayer object such as GaNAs having strong potential modulation and steep concentration gradient of N atoms even on a heterointerface. SOLUTION: In the manufacture of a compound semiconductor multilayer laminate, a vacuum vessel is provided with a Ga (group III element) particle beam source, an As (group V element) particle beam source and an N (nitrogen) particle beam source, a nitrogen particle beam is generated by igniting plasma only when forming a GaNAs layer (N-containing layer), the N atom content of a GaAs layer (N non-containing layer) is turned to be less than 1% by putting out the plasma when forming the GaAs layer, and also the N atom content of the GaNAs layer is turned to be 1-10%. COPYRIGHT: (C)2007,JPO&INPIT
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