| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems that a PSG film and a BSG film are needed as thermal diffusion sources and processes are complicated when thermally diffusing the oppositely conductive impurities of a low concentration from an insulating film containing the oppositely conductive impurities, by not using ion implantation but using thermal treatment for forming a low concentration source/drain diffusion layer relating to a CMOS semiconductor device. SOLUTION: In the semiconductor device and its manufacturing method by executing thermal treatment with only a PSG film or a BSG film as the thermal diffusion source, a shallow low concentration source/drain diffusion region can be easily formed. COPYRIGHT: (C)2007,JPO&INPIT
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