发明名称 CRUCIBLE FOR GROWING CRYSTAL AND METHOD OF GROWING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a crucible for growing a crystal, which enables growth of a high-quality crystal whose melt has large wettability to a material composing the crucible, and a method of growing a single crystal. SOLUTION: The crucible for growing the crystal through a micro-pulling-down method comprises a pore part 8, a die part 7, an outer bottom surface 9 and a container part 6. Here, the angle between the side of the die part 7 and the outer bottom surface 9 is adjusted to 120-150°. The crucible is used in the method of growing the single crystal. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007197269(A) 申请公布日期 2007.08.09
申请号 JP20060019048 申请日期 2006.01.27
申请人 NEC TOKIN CORP 发明人 FUJIWARA CHIEKO;MACHIDA HIROSHI;SASAKI ATSUSHI
分类号 C30B15/08 主分类号 C30B15/08
代理机构 代理人
主权项
地址