| 摘要 |
A control method for a nonvolatile storage device having a storage mode in which in a memory cell provided with a trapping dielectric layer 1-bit data is stored depending on the presence or absence of charge in a first trapping region. In a dynamic reference cell initialization operation, a charge accumulation operation is performed, as a preset operation in the initialization operation, on second trapping regions of first and second dynamic reference cells to a charge accumulation operation on a second trapping region of the memory cell. In addition, at the time of data rewrite, preprogram verification and preprogramming are performed on the first trapping regions. This makes it possible to shorten the time taken for initialization and data rewrite.
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