| 摘要 |
A phase change RAM (PRAM) including a resistance element having a diode function, and methods of fabricating and operating the same are provided. The PRAM may include a substrate, a phase change diode layer formed on the substrate and an upper electrode formed on the phase change diode layer. The phase change diode layer may include a material layer doped with first impurities, and a phase change layer which is stacked on the doped layer. The phase change layer may show characteristics of a semiconductor material doped with impurities having an opposite conductive type to that of the first impurities.
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