发明名称 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM
摘要 A plasma enhanced atomic layer deposition (PEALD) system includes a processing chamber defining an isolated processing space within the processing chamber, and a substrate holder provided within the processing chamber and configured to support a substrate. A first process material supply system is configured to supply a first process material to the processing chamber, a second process material supply system is configured to supply a second process material to the processing chamber and a power source is configured to couple electromagnetic power to the processing chamber. A contaminant shield is positioned along a periphery of the substrate holder and configured to impede external contaminants that permeate the chamber from traveling to a region of the substrate holder, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.
申请公布号 WO2006104864(A3) 申请公布日期 2007.08.09
申请号 WO2006US10685 申请日期 2006.03.22
申请人 TOKYO ELECTRON LIMITED;ISHIZAKA, TADAHIRO;YAMAMOTO, KAORU 发明人 ISHIZAKA, TADAHIRO;YAMAMOTO, KAORU
分类号 C23C16/00 主分类号 C23C16/00
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