| 摘要 |
PROBLEM TO BE SOLVED: To restrain advancing of cracks into the inside of a semiconductor device. SOLUTION: The semiconductor device has a first impurity region 7 formed to the surface layer of a semiconductor substrate 1 and used as a source or a drain for a transistor, a second impurity region 8 formed to the surface layer at the edge of the semiconductor substrate 1, and an interlayer insulating film 100 formed on the semiconductor substrate 1. The semiconductor device further has a first trench 150, formed on the interlayer insulating film 100 and penetrated vertically through the interlayer insulating film 100 positioned on the edge of the semiconductor substrate 1, and a second trench 150 formed on the semiconductor substrate 1 that is positioned under the first trench 150 and having a bottom section positioned at approximately the same place as or at a place deeper than the second impurity region 8. COPYRIGHT: (C)2007,JPO&INPIT
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