| 摘要 |
Methods for forming portions of source and drain (S/D) regions of a first ensuing transistor ( 40 ) to include a semiconductor material ( 47 ) having a different composition of non-dopant elements than portions of S/D regions ( 35 ) of a second ensuing transistor ( 30 ) of opposite conductivity type are provided. The methods additionally include forming another semiconductor material ( 48 ) upon at least one set of the S/D regions of the ensuing transistors such that S/D surface layers of the ensuing transistors include substantially the same composition of non-dopant elements. A resulting semiconductor topography includes a pair of CMOS transistors ( 30, 40 ) collectively having S/D region surfaces with substantially the same composition of non-dopant elements. The S/D regions of one transistor ( 40 ) of the pair of CMOS transistors includes an underlying layer ( 47 ) having a different composition of non-dopant elements than underlying layers of the S/D regions ( 35 ) of the other transistor ( 30 ).
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