发明名称 |
Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuits |
摘要 |
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.
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申请公布号 |
US2007181947(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20060347164 |
申请日期 |
2006.02.03 |
申请人 |
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
CHING HO CHAN PHILIP;CHAN MAN SUN;WU XUSHENG;ZHANG SHENGDONG |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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