| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode in which discharging does not occur between a wafer and a dielectric body, and which is capable of realizing desired wafer temperature distribution. <P>SOLUTION: The electrode for placing a wafer comprises dielectric layers 2-6 provided on a surface of a substrate 1, a groove 9 provided within the substrate 1 in which a cooling medium for wafer temperature adjustment flows, gas emission holes for heat conduction for emitting gases for heat conduction from surfaces of the dielectric layers 2-6, and a gas feeding pipe 10 for heat conduction for feeding gases for heat conduction to the gas emitting hole 7 for heat conduction. Further, the electrode is provided for placing the wafer to be used for a plasma treatment device which carries out wafer treatment by placing a wafer 8 on the dielectric layers 2-6, fixing the wafer through electrostatic adsorption, causing the cooling medium for wafer temperature adjustment to flow inside, and adjusting the temperature of the wafer by feeding the gases for heat conduction between the dielectric layers and the wafer. Such an electrode for placing the wafer is disposed so that overall surfaces of the dielectric layers are brought into contact with the wafer, and surface coarseness of the dielectric layers in an area where the wafer is brought into contact with the dielectric layers is changed in accordance with a position of the area. <P>COPYRIGHT: (C)2007,JPO&INPIT |
