Semiconductor light emitting device and its manufacture method

摘要

A semiconductor light emitting device is provided having a highly reliable reflection and electrode layer. The semiconductor light emitting device is manufactured by the steps of: forming an insulating film on a surface of a silicon substrate; forming an adhesion layer made of at least one of Ti and Cr on the insulating film; forming a barrier metal layer made of at least one of Ni, Pt and Pd on the adhesion layer; forming one or more silver alloy portions each constituting a silver alloy layer on the barrier metal layer; and electrically connecting at least one of the silver alloy portions to a semiconductor light emitting device chip.