发明名称 |
Solid-state imaging apparatus and method for producing the same |
摘要 |
A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
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申请公布号 |
US2007184570(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20070726437 |
申请日期 |
2007.03.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UCHIDA MIKIYA;MATSUNAGA YOSHIYUKI;INAGAKI MAKOTO |
分类号 |
H01L21/00;H01L27/146;H01L31/10;H04N5/335;H04N5/357;H04N5/369;H04N5/374 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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