Solid state imaging device

摘要

A solid state imaging device includes: a plurality of photoelectric conversion portions formed in a substrate in a matrix arrangement to convert light incident on light receiving portions into electricity; a plurality of vertical transfer registers for reading charges out of the photoelectric conversion portions and transferring the charges in the column direction; and a plurality of shunt interconnections formed above the vertical transfer electrodes in one-to-one correspondence with the columns of the photoelectric conversion portions to supply drive pulses to the corresponding vertical transfer electrodes. Each of the vertical transfer registers includes a vertical transfer channel formed in the substrate in one-to-one correspondence with a column of the photoelectric conversion portions and a plurality of vertical transfer electrodes formed above the vertical transfer channel. Each of the shunt interconnections is configured to surround the light receiving portions and having windows that expose the light receiving portions.