发明名称 Semiconductor device and manufacturing method thereof
摘要 An interlayer insulating film covering a ferroelectric capacitor is formed, and through the interlayer insulating film, contact holes each reaching a capacitor electrode are formed. A wiring connected to the capacitor electrode through the contact hole is further formed above the interlayer insulating film. A planar shape of the contact hole is a regular octagon, a regular rectangle with four angles thereof being rounded, an octagon with a length of each neighboring side thereof being different to each other, a circle, and so forth.
申请公布号 US2007184595(A1) 申请公布日期 2007.08.09
申请号 US20070727033 申请日期 2007.03.23
申请人 FUJITSU LIMITED 发明人 MIURA JIROU;FUJIKI MITSUSHI;DOTE AKI;TAKAMATSU TOMOHIRO
分类号 H01L21/338;H01L27/105;H01L21/02;H01L21/311;H01L21/768;H01L21/8246;H01L27/115 主分类号 H01L21/338
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