| 摘要 |
<p>The present invention provides a light emitting diode comprising a substrate; a nitride semiconductor layer formed on the substrate; an ITO mask pattern formed on the nitride semiconductor layer; an N-type semiconductor layer formed through lateral growth on the nitride semiconductor layer and the ITO mask pattern; and a P-type semiconductor layer formed on the N-type semiconductor layer. In a nitride semiconductor light emitting diode of the present invention, a nitride semiconductor layer is formed through lateral growth, so that crystal defects can be reduced, thereby enhancing the crystallinity of the semiconductor layer. Accordingly, the performance of the light emitting diode can be enhanced, and the reliability thereof can be secured. Particularly, there is an advantage in that since ITO with high electrical conductivity is used as a mask pattern for lateral growth, so that a current spreading property is improved, thereby enhancing light emitting efficiency.</p> |
