LOW-VOLTAGE ORGANIC THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF

摘要

A low-voltage organic thin film transistor and its fabricating method are provided to reduce an operational voltage and a threshold voltage of an organic thin film transistor by forming a metal oxide layer as a thin film of 10 nm and less by oxidizing directly a patterned gate electrode. A gate electrode(12) is formed by patterning and depositing a metal on a substrate(10). The gate electrode is directly oxidized by performing an O2 plasma process in a range of room temperature to 100 °C and less. A metal oxide layer(13) is grown in a thickness of 10 nm and less by oxidizing directly the gate electrode. A gate insulating layer is formed along a surface of the gate electrode by growing the metal oxide layer. An organic semiconductor layer(14) is deposited on the gate insulating layer. Source/drain electrodes(15,16) are formed in an interval from each other on the organic semiconductor layer.