发明名称 THIN FLIM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME
摘要 <p>A TFT array substrate and a method for fabricating the same are provided to simplify a manufacturing process and to improve process efficiency by patterning a pixel electrode and a reflective electrode with only one mask. A plurality of gate lines are arranged in a first direction. A plurality of data lines(62) are insulated from the gate lines and are arranged in a second direction. A thin film transistor includes pixels. Each of pixels includes a reflective region for reflecting incident light and a transmitting region for transmitting the incident light and is connected to the gate lines and the data lines. A pixel electrode is formed at the transmitting region and is connected to the thin film transistor. A reflective electrode(82) is formed at the reflective region and is separated from the pixel electrode. A dummy reflection electrode(85) is overlapped along the gate lines and/or the data lines and is separated from the pixel electrode.</p>
申请公布号 KR20070080105(A) 申请公布日期 2007.08.09
申请号 KR20060011222 申请日期 2006.02.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOUNG, JONG HYUN;PARK, HONG SICK
分类号 H01L29/786 主分类号 H01L29/786
代理机构 代理人
主权项
地址
您可能感兴趣的专利