发明名称 |
THIN FLIM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME |
摘要 |
<p>A TFT array substrate and a method for fabricating the same are provided to simplify a manufacturing process and to improve process efficiency by patterning a pixel electrode and a reflective electrode with only one mask. A plurality of gate lines are arranged in a first direction. A plurality of data lines(62) are insulated from the gate lines and are arranged in a second direction. A thin film transistor includes pixels. Each of pixels includes a reflective region for reflecting incident light and a transmitting region for transmitting the incident light and is connected to the gate lines and the data lines. A pixel electrode is formed at the transmitting region and is connected to the thin film transistor. A reflective electrode(82) is formed at the reflective region and is separated from the pixel electrode. A dummy reflection electrode(85) is overlapped along the gate lines and/or the data lines and is separated from the pixel electrode.</p> |
申请公布号 |
KR20070080105(A) |
申请公布日期 |
2007.08.09 |
申请号 |
KR20060011222 |
申请日期 |
2006.02.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOUNG, JONG HYUN;PARK, HONG SICK |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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