| 摘要 |
A method and apparatus for controlling photoresist baking processes. A wafer is provided with the wafer having a layer of photoresist thereon. A first thickness of the photoresist layer is measured, and a first fourier transform infrared (FTIR) spectra of the photoresist layer is generated. Based on the first thickness and first FTIR spectra, a bake time and bake temperature is determined. The wafer is then baked at the bake temperature for the bake time. |
