DIRECT BONDED CHIP SCALE PACKAGED LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF
摘要
A chip scale packaged light emitting diode and its fabricating method are provided to obtain two individual light emitting elements by connecting an n type first electrode with an n type second electrode and separating chips from each other. A chip scale packaged light emitting diode includes a substrate(200) and n type and p type semiconductor layers(201,203) formed on the substrate. An n type first electrode(205) and a p type first electrode(204) are formed on the n type semiconductor layer and the p type semiconductor layer, respectively. A first protective layer is formed on the n type first electrode and the p type first electrode. An n type second electrode(210) and a p type second electrode(209) are electrically connected through the first protective layer to the n type first electrode and the p type first electrode.
申请公布号
KR20070079956(A)
申请公布日期
2007.08.08
申请号
KR20070066709
申请日期
2007.07.03
申请人
KOREA PHOTONICS TECHNOLOGY INSTITUTE
发明人
YU, YOUNG MOON;BAEK, JONG HYEOB;KIM, SANG MOOK;JHIN, JUNG GUN;LEE, SANG HERN;JEONG, TAK;LEE, SEUNG JAE;KIM, YOON SEOK;LEE, JIN HONG;KIM, KANG HO;OH, HWA SEOP;YOM, HONG SEO