| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to improve the refresh characteristic by reducing contact resistance and increasing current. A pad oxide layer and a pad nitride layer are formed on a semiconductor substrate(160). A trench is formed by etching a pad nitride layer, a pad oxide layer, and the semiconductor substrate by using an isolation mask having an extended edge part of the major-axis direction. A liner nitride layer and a liner oxide layer of a constant thickness are formed on a front surface of the semiconductor substrate including the trench. An oxide layer for burying the trench is formed to define an isolation region and an active region. The active region is formed by extending an edge part of a long-axis direction in a circular shape.
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