| 摘要 |
A redundancy fuse circuit of a semiconductor memory device is provided to reduce the size of a semiconductor memory chip by including a reduced number of fuses so as to reduce the area occupied by fuses. In a redundancy fuse circuit(200) of a semiconductor memory device, a fuse circuit part(210) includes a plurality of first fuses and outputs a plurality of fuse output signals having logic values determined according to a cut or un-cut state of each fuse. A logic calculation part(220) outputs a plurality of control signals in response to the fuse output signals and a plurality of address signals. An output part(230) outputs redundancy signals, in response to an enable signal and the control signals.
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