发明名称 PHOTOLITHOGRAPHY SYSTEM
摘要 <p>An exposure system is provided to restrain the decrease of intensity of the excimer layer emitted from a light supply chamber by arranging the light supply chamber and an exposure chamber adjacent to each other. An exposure system(100) includes a light supply chamber and an exposure chamber. The light supply chamber(120) includes a light source for emitting excimer layer. The exposure chamber(110) supplies the excimer layer emitted from the light source onto a substrate along a predetermined pattern of a mask. The light supply chamber is installed in the exposure chamber or adjacent to the exposure chamber. The excimer laser is one selected from a group consisting of KrF excimer layer or ArF excimer laser.</p>
申请公布号 KR20070079845(A) 申请公布日期 2007.08.08
申请号 KR20060010846 申请日期 2006.02.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OH, YOUNG SU;SUNG, JI HWAN;BAE, WOO SUNG
分类号 H01L21/027 主分类号 H01L21/027
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