发明名称 Method and apparatus for extending the size of a transistor beyond one integrated circuit
摘要 <p>A technique for extending the size of a power transistor beyond one integrated circuit. In one embodiment, a method of extending the size of a power transistor beyond one integrated circuit includes a master integrated circuit (209) comprising a master control circuit (204), master driver circuit (203) and master semiconductor switch (201) and one or more slave integrated circuits (208) comprising a slave semiconductor switch (200) and a slave driver circuit (202). In one embodiment the master semiconductor switch terminals (214, 215) are coupled to the corresponding slave semiconductor switch terminals. In one embodiment the master driver circuit (203) input and slave driver circuit (202) inputs are coupled to be driven by a control signal being the output of the master control circuit (204). </p>
申请公布号 EP1480334(A3) 申请公布日期 2007.08.08
申请号 EP20040252802 申请日期 2004.05.14
申请人 US 发明人 US
分类号 H02M7/12;H03F3/217;H02M1/08;H02M3/155;H03K17/12;H03K17/687 主分类号 H02M7/12
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