METHOD OF MANUFACTURING A PHASE-CHANGEABLE MEMORY DEVICE

摘要

A method for manufacturing a phase-changeable memory device is provided to simplify a manufacturing process by forming a contact electrode with a first CMP process. A metal layer pattern(120) separated by a trench is formed by etching a metal layer exposed by a hard mask(122). A dielectric layer pattern(126) is formed to bury the trench. A first insulating layer(128) and a second insulating layer are sequentially formed to cover the hard mask and the dielectric layer pattern. An opening is formed to expose a surface of the metal layer pattern. A conductive layer is formed on the second insulating layer to bury the opening. The conductive layer is electrically connected to the metal layer pattern. A contact electrode(140) is formed by performing a CMP process for the resultant. A phase-changeable material layer is formed on the first insulating layer to be electrically connected to the contact electrode. An upper electrode is formed on the phase-changeable material layer.