| 摘要 |
<p>A mask layer forming method and a mask layer forming apparatus are provided to improve the preciseness of patterning and to treat securely a large sized substrate by restraining the misalignment between the substrate and a mask due to the warpage of the substrate or mask and preventing the failure of attachment between the substrate and mask. At least one out of a substrate(10) and a mask(20) is bended. The substrate and the mask are aligned with each other along a ridge portion. A line contact process is performed on the substrate and mask along the ridge portion. A surface contact process is then performed on the substrate and mask. The line contact process is performed by using a planar member. The substrate and mask are securely fixed to each other by using a magnetic force during the surface contact process.</p> |
