A method for fabricating a wafer structure with a strained silicon layer and an intermediate product of this method,申请号KR20050098130-传众专利搜索

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发明名称	A method for fabricating a wafer structure with a strained silicon layer and an intermediate product of this method
摘要
申请公布号	KR100747710(B1)	申请公布日期	2007.08.08
申请号	KR20050098130	申请日期	2005.10.18
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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