| 摘要 |
A plasma processing apparatus with a resonance countermeasure function is provided to detect accurately a high-frequency voltage and a phase by optimizing a high-frequency transmission line and a detector for detecting the voltage or the phase. A lower electrode is installed in an inside of a vacuum vessel. A sample is loaded into the lower electrode. An upper electrode is installed opposite to the lower electrode. A first matching unit is connected to the lower electrode. A first power supply unit supplies electric power through the first matching unit to the lower electrode. A second matching unit is connected to the upper electrode. A second power supply unit supplies the electric power through the second matching unit to the upper electrode. A first detector is installed in the inside of the first matching unit or near to the first matching unit to detect a voltage or a phase. A second detector is installed in the inside of the second matching unit or near to the second matching unit to detect a voltage or a phase. A transmission line formed between the first detector and the lower electrode or a transmission line formed between the second detector and the upper electrode satisfies the following condition, LC<(4pifB)^-2 where L is a representative value of inductance causing resonance, such as the inductance of the transmission line, C is a representative value of electrostatic capacitance causing the resonance, such as stray capacitance of the transmission line or the stray capacitance of plasma ion sheath, and fB includes high frequency biasing to be applied to the upper electrode or the lower electrode.
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