| 摘要 |
A fuse structure of a semiconductor device is provided to reduce the error rate of fuse lines by increasing a gap between upper fuse lines in comparison with a gap between lower fuse lines. A fuse structure of a semiconductor device includes a first fuse group(130). The first fuse group includes a plurality of lower fuse lines(100), a plurality of upper fuse lines(110), and a plurality of contacts(120). The lower fuse lines are formed in a constant interval on an upper surface of a semiconductor substrate and are extended in a predetermined direction. The upper fuse lines are formed on the lower fuse lines. A gap between the upper fuse lines is larger than a gap between the lower fuse lines. The upper fuse lines are extended in a direction opposite to the predetermined direction. The contacts are formed to connect the lower fuse lines with the upper fuse lines.
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