| 摘要 |
A fuse structure of a semiconductor device is provided to protect a lower region of an upper fuse line and a lower fuse line by forming a protective layer between the upper fuse line and the lower fuse line. A fuse structure of a semiconductor device includes a plurality of fuse lines formed on an upper surface of a semiconductor substrate(400) and a protection layer(440) formed between the semiconductor substrate and the plurality of fuse lines to protect lower regions of the fuse lines from energy of laser beams irradiated onto the fuse lines. The fuse lines include a lower fuse line(410) extended in a predetermined direction on the semiconductor substrate and an upper fuse line(420) formed on the lower fuse line. The upper fuse line is extended in a direction opposite to the predetermined direction. A contact(430) is formed to connect an end of the lower fuse line with an end of the upper fuse line. The protection layer is formed on the lower fuse line to protect the lower fuse line from the energy of the laser beams irradiated onto the upper fuse line.
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