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发明名称
FIN FIELD EFFECT TRANSISTOR MEMORY CELL, FIN FIELD EFFECT TRANSISTOR MEMORY CELL ARRANGEMENT, AND METHOD FOR THE PRODUCTION OF A FIN FIELD EFFECT TRANSISTOR MEMORY CELL
摘要
申请公布号
KR100747896(B1)
申请公布日期
2007.08.08
申请号
KR20057011624
申请日期
2005.06.20
申请人
发明人
分类号
H01L29/78;G11C11/21;G11C11/34;H01L21/28;H01L21/336;H01L21/8246;H01L27/108;H01L27/115;H01L29/423;H01L29/786;H01L29/792
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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