发明名称 PLASMA PROCESSING APPARATUS AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATES USING THE SAME
摘要 A plasma processing apparatus and a substrate processing method using the same are provided to improve the uniformity of a substrate treatment process under a plasma condition by distributing uniformly a process gas supplied through an upper electrode using a driving unit for generating the centrifugal force. The plasma processing apparatus includes a process chamber(10) for performing a plasma treatment process, a lower electrode(100) for supporting a substrate in the process chamber, an upper electrode, and a driving unit. The upper electrode(200) is installed opposite to the lower electrode to spray a process gas onto the substrate. The driving unit(400) is used for rotating the upper electrode. The driving unit is composed of a driving source, a driving pulley at an output stage of the driving source, and a belt member for transmitting the torque of the driving pulley to the upper electrode.
申请公布号 KR100749545(B1) 申请公布日期 2007.08.08
申请号 KR20060052667 申请日期 2006.06.12
申请人 SEMES CO., LTD. 发明人 WANG, HYUN CHUL;JANG, YONG SU;YANG, JUN HYEOK
分类号 H01L21/3065 主分类号 H01L21/3065
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