| 摘要 |
<p>Semiconductor layer structure fabrication comprises providing a substrate (1) made of a first semiconductor material; applying a first layer (made of a second semiconductor material) to the substrate, where substrate and layer defines a semiconductor layer structure; implanting light gas ions into the semiconductor layer structure to produce a cavity layer (including cavities (4)) in the semiconductor layer structure; using impurity atoms to stabilize the cavities; applying an epitaxial layer(s) to the semiconductor layer structure. An independent claim is included for a semiconductor layer structure. The substrate is a wafer made of monocrystalline silicon; a silicon-on-insulator wafer; a semiconductor wafer that has been fabricated by a bonding method. It is made of polycrystalline semiconductor material; or is a silicon layer, a silicon-germanium layer, or a germanium layer. The light gas ions are hydrogen ions, and/or noble gas ions consisting helium, neon, or argon. The impurity atoms are oxygen, nitrogen, or carbon. Using impurity atoms includes a thermal treatment of the semiconductor layer structure at >=600[deg]C.</p> |
